Fixed charge in high-k/GaN metal-oxide-semiconductor capacitor structures

Charge storage in a metal–oxide–semiconductor capacitor containing cobalt nanocrystals

Self-assembled cobalt (Co) nanocrystals on ultra-thin silicon dioxide layer were fabricated by in situ annealing Co ultrathin films deposited with Co effusion cell in a molecular-beam-epitaxy chamber. The resultant nanocrystals obtained at the optimized annealing temperature are around 3–4 nm in diameter with dot density of about 1 · 10 cm . The metal–oxide–semiconductor capacitors containing C...

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect very small displacements due to its output of lateral photovoltage changing linearly with light spot position. In this review, we will summarize some of our recent works regarding LPE in metal-semiconductor and metal-oxide-semiconductor structures, and give a theoretical model of LPE in these two structu...

Infrared electroluminescence from metal-oxide-semiconductor structures on silicon

Room temperature electroluminescence from metal-oxide–semiconductor structures on silicon is observed. The thin oxide is grown by rapid thermal oxidation. With the metal negatively biased, luminescence can be observed. The emission is voltage dependent. For an applied voltage below 5 V, the emission occurs around 1150 nm, approximately corresponding to the Si bandgap energy. For a larger applie...

Numerical Simulation of Tunneling Current in an Anisotropic Metal-Oxide-Semiconductor Capacitor

In this paper, we have developed a model of the tunneling current through a highdielectric stack in MOS capacitors with anisotropic masses. The transmittance was numerically calculated by employing a transfer matrix method and including longitudinal-transverse kinetic energy coupling which is represented by an electron phase velocity in the gate. The transmittance was then applied to calculate ...

Surface micromachined, complementary-metal-oxide-semiconductor compatible tunable capacitor with 14:1 continuous tuning range